2.16µm Back Side Illuminated Voltage Domain Global Shutter CMOS Image Sensor with single silicon layer pixel

We present the smallest 2.16µm pitch voltage domain global shutter pixel built on a single silicon layer. A novel and very compact pixel architecture is used along a very dense front-end capacitor integration. Leading to the smallest sensor size for the given 800x700 resolution. This pixel is associated to a logic circuit through 3D Cu-to-Cu hybrid bonding process providing state-of-the-art on-chip data processing and interface. Good performance trade-off is achieved with high QE and spatial resolution. Noise figures are also remarkable, allowing up to 90dB linear dynamic range in a single frame using spatially split exposure mode.