Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

Low n-type contact resistance (R
C
) of 9.7 kΩ/CNT to carbon nanotubes (CNT) with short contact length (L
C
) of 20 nm is achieved by utilizing solid-state n- doping near the metal contact. AIN doping with barrier layer demonstrated in this work enables transparent electron conduction for both Pd and Ti metal contacts. We systematically explore doping strength control with barrier thickness, R
C
trends scaling down to 20 nm L
C
, CNT bandgap dependence of doping, and device stability for insight into electrical impact of key process parameters. Symmetric R
C
n- and p-FET reveals a clear path to meet IRDS target for 2034 device roadmap.