A Materials-Device Co-Design Framework for Realizing Ultra Energy-Efficient All-2D Spin-Logic Circuits with 2D-Materials

Although two-dimensional (2D)-materials (2DM) with a wide range of spin orbit coupling (SOC), and exotic structural and electrical properties, are very attractive for designing both spin-transistors and interconnects, the lack of a thorough understanding of spin dynamics has prevented the practical realization of 2D spin-logic. Aided by ab-initio density functional theory (DFT) calculations and a rigorous modeling framework developed based on kinetic spin Bloch equation (KSBE), this work introduces a materials-device co-design framework that robustly models relevant spin relaxation and dephasing mechanisms to simultaneously provide realistic design guidelines to both materials and device engineers. Our framework reveals the impressive attributes of graphene for enabling spin interconnects with spin diffusion lengths ≥ 25 μm. Simultaneously, optimized 2D-spin-FETs are shown to markedly exceed MOSFETs in circuit performance with an order of magnitude improvement in energy-delay-product (EDP) and two orders of magnitude enhancement in energy efficiency. Our comprehensive co-design framework therefore paves the way for seamless all-2D spin logic.