A Novel Universal Model for Extracting Specific Contact Resistivity Featuring High Resolution, Strong Variation Immunity, and Simple Fabrication Process

A novel and universal model for extracting specific contact resistivity (ρ
C
) named Nano bridge transmission line method (Nano-BTLM) has been proposed with its effectiveness and accuracy comprehensively validated by both TCAD Sentaurus simulations and experiments. The Nano-BLTM offers several advantages, including the elimination of parasitic resistance (R
p
), simple fabrication process, highly accurate ρ
C
extraction with a resolution of sub-10
⁻¹⁰
Ω·cm
²
, strong variation immunity, and universal applicability. It fulfils all the essential requirements for characterizing the state-of-the-art metal/semiconductor contacts. To demonstrate the capabilities of Nano-BTLM, extensive investigations have been carried out using metal/ITO contacts as the test vehicle. The studies encompass the examination of various contact metals and the impact of annealing.