Advancing High-Performance Large-Scale Quantum Computing with Cryogenic 2D-CMOS

We present the first comprehensive evaluation of 2D-semiconductors (2DS) as a promising materials platform for realizing cryogenic-CMOS interface-electronics to enable highperformance large-scale quantum computing. Our study encompasses ab-initio density functional theory and quantum transport simulations as well as the development of a novel 2D-FET compact model applicable at cryogenic temperatures. Our analyses reveal that the pristine interface, uniform thickness, excellent electrostatics, high density of states, smaller Urbach energy, lower thermal and flicker noise of 2DS w.r.t conventional bulk-semiconductors such as Si, Ge, and GaAs allow them to be employed in cryogenic CMOS FETs with ultra-low supply voltages, minimal device-to-device variation, and unprecedented improvements in energy-efficiency and performance, thereby paving the way for next-generation 2DS based cryo-electronics and large-scale quantum computers.