A cost effective RF-SOI Drain Extended MOS transistor featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier application

A high voltage N-type Drain Extended MOS (NDEMOS) in 40nm RFSOI technology is presented for PA application. After a careful optimization of the drain extension, the NDEMOS transistor exhibits a f
T
.BV>700 GHz.V & f
MAX
=205GHz at L
g
=70nm & V
DD
=2V, that meet the PA requirements at mmW frequency. The large-signal RF performance of a common-source NDEMOS PA cell are assessed. It exhibits 19.2dBm of P
SAT
@V
DD
=3V, that may be further improved in a cascode configuration. With this NDEMOS device, this 300mm SOIMMW technology becomes a very cost effective platform for Front End modules (FEM) that can be competitive with other CMOS technologies (Fig. 26).