The First CMOS-Integrated Voltage-Controlled MRAM with 0.7ns Switching Time

Spin-Transfer-Torque (STT) Magnetic Random Access Memory (MRAM) has shown good density and compatibility with advanced nodes, but its write operation is slow and power-hungry. Voltage-Controlled (VC) Magnetic Tunneling Junction (MTJ) is a new magnetic storage device that shows significantly faster write speed and lower power, but no prior work has shown an embedded VC-MRAM array. In this paper, we present the first CMOS-integrated VC-MRAM. The VC-MRAM shows an ultra-fast 700ps switching time using 1.8V write voltage. The switching time has good uniformity, and 92% switching probability is achieved across the array. Reliability of >10
¹¹
write cycles and read time of 8.5ns are demonstrated.