Radiation-induced Enhancement of Scattering Effects in FD-SOI MOSFETs

Experimental results show a radiation response in 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keVx-rays. A degradation in the mobility is observed as a function of radiation. The mobility degradation is shown to be position dependent by testing at different back gate biases. The method used to extract mobility from drain current is shown. Quantum mechanical simulations were performed to show the shift in the charge centroid with varying back gate bias.