TCAD Calibrated SEE Fault Model Validated with Beam Results for a 12nm D Flip-Flop.

A simple simulation-based approach to accurately estimating the single even effect (SEE) cross section of a standard cell library Flip-Flop is presented. A SPICE level model of charge injection is calibrated to 3D mixed mode technology computer aided design (TCAD) device simulations. The TCAD results for charge collection by distance from the fin are then used to estimate the sensitive area of the Flip-Flop circuit at a given LET. We show good agreement between the circuit simulations and measured results.