Spatial Dependence of Single Event Transients in Wide Bandgap Materials Photodiodes Probed by Pulsed Laser, Pulsed X-Rays and Heavy Ions Microbeam

In this work, we report on the investigation of the spatial dependence of single event transients observed in wide bandgap semiconductor based components (gallium nitride and silicon carbide), generated by femtosecond pulsed laser, pulsed X-rays and heavy ions microbeam. We evidence a strong spatial dependence of the amount of collected charges as a function of the distance to contacts. Similar variations are observed among all three tests means.