Radiation and its Effects on monolithic GaN integrated half-bridge for dc-dc converters

This paper first presents the successful co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power integrated circuit. The addition of these components enables the design of chips with extended functionality and increased performance that takes monolithically-integrated GaN power ICs one step further.The built circuit features all blocks needed to make a fully GaN integrated half-bridge 200V, 10A and 5MHz switching.The circuit has been tested against heavy-ions & total ionizing dose in order to survive harsh space environments. The results presented in this document allow to claim that the technology is per nature radiation hard for space applications. This achievement paves the way towards smaller and more efficient DC/DC converters and Point-of-Load converters for space.