Transient Responses of a Mode-III Crack in a Piezoelectric Semiconductor Material

The transient responses of a Mode-III crack in piezoelectric semiconductor materials under combined anti-plane shear mechanical and in-plane electrical impacts are investigated in this article. During the solution, the standard integral transform and singular integral equation techniques are applied, and the dynamic intensity factors and energy release rate are obtained in the time domain. Numerical results indicate that the fracture parameters are critically dependent on the conductivity of the material. The conclusions in this article may be useful for the design of semiconductor devices.