Preparation and Electrical Properties of K/Ce/Sm Co-Doped CaBi2Nb2O9 Ultrahlgh-Tc Piezoelectric Ceramics

The present study employs the traditional solid-state reaction method to prepare K/Ce/Sm co-doped CaBi
2
Nb
2
O
9
high-temperature piezoelectric ceramics (Ca
0.88
(K
0.5
CexSm
0.5
-x)
0.12
Bi
2
Nb
2
O
9
, x=0.1-0.4). The influence mechanism of different doping concentrations of Ce
⁴
+ and Sm
³
+ on the phase composition, microstructure, and electrical behavior of CaBi
2
Nb
2
O
9
ceramics is investigated. Dielectric temperature spectroscopy and complex impedance spectroscopy studies have shown that an appropriate amount of (KCeSm) composite ion doping reduces the Curie temperature of CBN, but significantly improves the DC resistivity of the ceramics. Overall, when
$x=0.2$
, the doping system achieved the best electrical performance:
$d33=14$
pC/N,
$T_{c}=903$
°C,
$k_{p}=7.10\%, Q_{m}=320$
. It is a high-temperature piezoelectric component with great potential for application in ultra-high temperature piezoelectric devices.