An Interface Chip for Atomic Sensor With Highly Integration Using Multi-Voltage Reference

An interface chip for atomic sensor with highly integration using multi-voltage reference is proposed in this brief. Atomic sensors are growing fast in the direction of miniaturization and convenience, and higher demands are placed on integration and low power consumption. Atomic sensors are multi-loop feedback system, the interface circuit contains signal detection and drivers, which serve to implement temperature stabilization, vertical-cavity surface-emitting laser (VCSEL) locking, voltage controlled crystal oscillator (VCXO) regulation, and magnetic field control. Reference voltage buffer (RVB) has been proposed based on the characteristics of the atomic sensor system, which can be used for the high implementation of each driver and the digitization of the signal detection circuit, reducing the power consumption and improving integration. The proposed interface chip is fabricated in 180nm CMOS technology. Measurement results show that the signal detection circuit has a programmable gain of 30 dB to 60 dB and a bandwidth of 120 Hz to 7k Hz. The equivalent input current noise density (EICND) measurement results for the interface chip at maximum programmable gain is 1.41 pA/
$\surd $
Hz@1k Hz. The ADC achieves 75.8 dB signal-to-noise ratio (SNR) at 976.8066 Hz input sine signal while operating at sampling rate of 16 kS/s.