Yellow-green lasing emission from ZnCdSe/BeZnTe II-VI laser diodes on InP substrates

In this study, ZnCdSe-based II-VI LDs were fabricated on S-doped [100] oriented InP substrates with InGaAs buffer layers by molecular beam epitaxy, demonstrating the first successful lasing operation. The lasing wavelength was around 560 nm. Lattice matched ZnCdSe single quantum wells with 10 nm in thickness were employed as active region.