A Novel Fin-Shape Double-Gate GaAs p-MOSFET With Intrinsic Source and Enhanced Switching Performance

This article introduces a novel double-gate (DG) p-channel MOSFET based on gallium arsenide (GaAs), in which the source region is intrinsic and the holes are induced in this region by a U-shaped inductive semiconductor layer. Avoiding silicide formation is one of the main benefits of this architecture compared to the charge plasma devices, in which metals are used for the same purpose. Our proposed device fabrication process is highly compatible with template-assisted selective epitaxy method. According to the obtained results from numerical simulations, the performance metrics, such as subthreshold swing of 79.82 mV/dec,
${I}_{\text {on}}/{I}_{\text {off}}$
ratio of
$2.94\times 10^{{6}}$
, and drive current of
$0.97~\mu \text{A}/\mu \text{m}$
, indicate that our device is a good candidate for high-performance digital applications.