Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

This study presents a comprehensive investigation of defects in the gate-stack of low-thermal budget replacement metal gate (RMG) MOSFETs treated with novel dielectric passivation techniques using 1/
${f}$
noise characterization and advanced modeling. This research demonstrates that MOSFETs with gate-stacks treated with atomic hydrogen (H*) and oxygen (O*) (T < 450 °C) yield 1/
${f}$
noise levels comparable to those of high-thermal budget devices. We also demonstrate that the noise of both pMOSFETs and nMOSFETs mainly originates from defects in the SiO2 interfacial layer (IL). In addition, accurate modeling of 1/
${f}$
noise provides useful insights into the dielectric defect densities before and after passivation. Notably, the contribution of O-vacancies in HfO2 to 1/
${f}$
noise appears negligible, whereas it is very important for positive bias temperature instabilities (PBTIs). The results confirm the effectiveness of H* and O* treatments in reducing the electrically active dielectric defects while contributing to a better understanding of the underlying passivation mechanisms.