1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application

In this paper, a 1.2 kV wirebond-less Silicon Carbide (SiC) Intelligent Power Module (IPM) designed for automotive applications is presented. This IPM includes integrated decoupling capacitors and gate drivers. By utilizing Printed Circuit Board (PCB) technology to replace traditional wire bonds, a low-inductance structure is achieved. This design minimizes both power and gate loops when compared to standard wire bond packaging. Ansys Q3D extractor is used to extract and simulate these loops, resulting in estimated inductances of approximately 1.1 nH and less than 0.7 nH, respectively. From a design perspective, even though Schottky diodes are commonly used in commercial devices to reduce switching losses and provide protection, this design eliminates the need for additional diodes. This approach offers several advantages. Firstly, the space previously occupied by Schottky diodes can now be used to parallel multiple devices, increasing current ratings and reducing overall size, which simplifies the design. Additionally, by excluding diodes in parallel, a reduction in costs for the overall system design can be achieved. A comprehensive comparison with half bridge (HB) modules found in the literature is provided, detailing the advantages of proposed structure. The results demonstrate that this design offers a cost-effective integrated power module to meet the growing demand for higher power density in traction applications.