Modified Opposition Method Validation and Analysis for Characterization of Si IGBT

This paper showcases an application of the Modified Opposition Method (MOM) for the characterization of switching losses in silicon transistors namely IGBT devices. The platform built is composed of two half-bridges with an inductor connected between them, operating within two different current modes (AC Mode and DC Mode). In addition, it is presented an analysis regarding how each circuit component influences the switching losses alongside a comparison with datasheet data, acquired by means of the Double Pulse Test (DPT). The results showed that in low current applications (less than 10A), the losses calculated by MOM were lower (compared to the datasheet), while for higher currents, the losses calculated by MOM were higher, demonstrating the effect of temperature on switching energies. These differences can interfere in projects aiming for high efficiency over a wide load range.