Dynamic Characterization of 650V GaN HEMT Transistors

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) are an increasingly adopted choice for power conversion in the low voltage range. Their increased efficiency enables novel, high-power density converter design. The performance of these devices has been well explored in the higher power rated devices, but the high voltage, low current GaN HEMTs have been less explored. This paper presents a double pulse test setup, which was constructed to measure switching times and losses for both the turn-on and turn-off events. The setup provides novel data on the dynamic performance of discrete (GS66502B) and monolithically integrated (NV6115) 650V GaN HEMT transistors. Layout and test design guidelines are also provided. The results are compared to examine the potential benefits of using a monolithic solution and provide data for designers, enabling accurate prediction of switching loss.