Parameter Analysis Review on Multiple Quantum Well based InGaN/GaN Light Emitting Diode

The main issue with lightning systems is increasing the productivity of InGaN/GaN diodes that emit light. This article mainly concentrates on the efficiency enhancement of the device by addressing the efficiency droop problem. Various parameters like multiple quantum well, efficiency droop causes, material selection, design methodology, brightness improvement, and fabrication methods are studied and the best methodology for the efficiency droop issue of different applications is highlighted.