A +0.35 °C / -0.22 °C Inaccuracy CMOS-Based Temperature Sensor for IoT Applications

This work proposes a fully-integrated and low-power temperature sensor in a 180 nm standard CMOS technology. The dual loop clamping circuit and diode stacking structure are proposed to improve the accuracy. A dual input capacitor multiplexing Time-to-Digital Converter (TDC) is proposed to improve the resolution achieves. The simulated results shows that the inaccuracy is as low as +0.35 ° C / -0.22 ° Cover 0 ° C~ 120 °C with 0.08 °C-resolution, consuming only 246 nW at a 1.2 V supply voltage.