Switching Frequency Hysteresis Junction Temperature Control Strategy for Si IGBT/SiC MOSFET Inverter Parallel Module (SSIPM)

Due to the different junction temperatures during operation of Si IGBT/SiC MOSFET inverter parallel modules, and the traditional switch frequency junction temperature control strategy neglects this junction temperature difference, it cannot be directly applied to this parallel structure. To address this issue, this paper proposes a switching frequency hysteresis junction temperature control strategy for Si IGBT/SiC MOSFET inverter parallel modules. Based on the difference in junction temperature between Si IGBT and SiC MOSFET, adjusting the switching frequency of both can effectively reduce the average junction temperature and reduce junction temperature fluctuations. The results indicate that the switch frequency hysteresis junction temperature control strategy proposed in this article not only better controls the junction temperature, but also reduces the junction temperature difference between Si IGBT and SiC MOSET, and has little impact on the output power quality.