Research on Life of Parallel Module of SiC MOSFET/Si IGBT Inverter

There is a big difference between the life of SiC MOSFET and Si IGBT in the inverter based on SiC MOSFET/Si IGBT inverter parallel module. The life difference mechanism and the life change trend under different load currents are not clear, which is not conducive to the design of the optimal rated current ratio of the module. In order to solve the above problems, this paper firstly establishes the theoretical life model of SiC/Si inverter parallel module through theoretical analysis. Secondly, the simulation model of SiC/Si inverter parallel module is built, and the life difference mechanism and life change trend of SiC MOSFET and Si IGBT inverter under different rated current ratio are analyzed by loss-junction temperature analysis method. Finally, based on the life difference mechanism between SiC MOSFET and Si IGBT and the analysis results of the whole module life, the theoretical life model of SiC/Si parallel inverter module is modified and improved.