A 48V/360A Power Module-Based Paralleled-GaN Devices for Low-Voltage and High-Current Traction Inverter Applications

Gallium nitride GaN power semiconductors are gaining popularity in high-power traction inverter applications. The phase current can reach up to several hundred amps in such cases. Therefore, paralleling multiple GaN HEMT transistors is undoubtedly a solution for increasing power capability and reducing conduction losses. This paper proposes a highly integrated paralleled GANs power module design (100 V/360 A) based on an insulated metal substrate (IMS). The proposed design provides a low and symmetrical commutation loop inductance, high thermal conductivity, and a cost-effective solution. The double pulse test (DPT) experiment has been successfully implemented at 48V/325A to validate the effectiveness of the proposed design.