Design of a Device for Determining I-V curve of a Photovoltaic Panel Using SiC Power Transistors

This study presents the design of a device aimed at accurately determining the parameters of a photovoltaic (PV) panel through the utilization of Silicon Carbide (SiC) power transistors. The incorporation of SiC power transistors into the device's design ensures improved efficiency, durability, and reliability during the parameter measurement process. The architectural layout and operational principles of the device are elaborated upon, emphasizing the integration of SiC power transistors to enable precise parameter determination of the PV panel. Furthermore, the potential applications and advantages of this device within the field of solar energy are discussed. The proposed design holds great potential for advancing photovoltaic panel parameter determination techniques, ultimately contributing to the development of more efficient and sustainable photovoltaic systems.