Deep and Near UV Photodetector Based Upon Zirconium Diboride and n-Doped Silicon Carbide

In this article, a deep and near-ultraviolet photodetector (PD), consisting of an alloy of zirconium diboride (ZrB2) and Chromium (Cr) deposited on top of an n-doped silicon carbide (SiC) substrate, is examined. The device has a responsivity of 3.5 A/W at 405 nm with a similar value at 280 nm. It operates at powers below
$730 \, \mu \text{W}$
and saturates at higher powers. The rise time is about
$396 \,\mu \text{s}$
.