Millimeter-Wave Monolithic GaAs Power FET Amplifiers

Millimeter-wave monolithic GáAs power FETs with total gate widths of up to 400 μm and output powers up to 200 mW have been developed. These amplifiers were fabricated using sub-half-micron gate length FETs on MBE grown epitaxial layers with η + contact layers. A source overlay structure with via groundings has been used for the FET design. Power densities of 0.75 W/mm, 0.5 W/mm, and 0.45 W/mm were obtained at 29 GHz, 34 GHz and 41 GHz, respectively.