Comparison of GaN HEMT Thermal Resistance Measurement Method Between Uniform Pulse Method and Modulation Method

This paper mainly introduces the validation and comparison of two GaN HEMT device thermal resistance characterization methods: the uniform pulse method and the modulation method. The research group simulated the response of the two methods to different error sources on a computer, examined their feasibility, and explored their robustness towards different error sources. In this paper, the basic principles of the two error sources were selected according to the packaging temperature fluctuations and measurement delay cooling as error sources. The simulation results show that the uniform pulse method is more strongly affected by errors caused by packaging temperature fluctuations, while the modulation method can effectively resist errors caused by this factor. Meanwhile, both measurement methods failed to resist the measurement delay error, showing significant error increases in the delay duration scan from 0-10% off duration of maximum delay. In Addition, the modulation factor of the modulation method showcases an impact on the error ratio under the same delay time in the simulation.