Electrical Characteristics Analysis of AlGaN/GaN FinFET and TSEP Junction Temperature Test of GaN Devices

The third generation semiconductors with wide band-gap (WBG) mainly composed of SiC and GaN have excellent switching characteristics and are very popular in the market. With the chip size shrinking, the channel of the device is getting shorter and shorter, which is easy to cause short channel effect. Breaking through the channel length barrier has become the research focus; With the chip size shrinking, the volume of active region is getting smaller and smaller, and the influence of temperature on the reliability of devices is increasing, so the measurement of temperature rise and thermal resistance becomes an important work. The main research contents of this paper are as follows: (1) Using Silvaco TCAD software, 3D modeling of FinFET and the other two devices is carried out, and the electrical characteristics of the three devices are obtained and compared. Then, the transfer characteristics and transconductance characteristics of different Fin widths and Fin heights are tested, and the characteristic curves are obtained and analyzed; (2) Through TSEP method, the boost converter circuit is built with LTspice software to deduce the variation of junction temperature and shell temperature, and the junction temperature and other electrical characteristics are analyzed when the driving resistance is different.