Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene

Remote epitaxial GaN thin films are important to study for the preparation of flexible optoelectronic devices. In this paper, the growth of GaN films on graphene was carried out by a two-step method, and a dense nucleation layer was formed on graphene by regulating the growth parameters, and GaN films with good uniformity were obtained during the high-temperature film formation process. GaN films grown on AlN/sapphire templates were compared under the same growth conditions. The surface roughness, dislocation density, and film stress of GaN films grown on graphene were found to be superior to those grown on AlN/sapphire templates. It lays a foundation for the subsequent epitaxy of high-quality GaN films and the preparation of high-performance devices.