Application of Methyl Trichlorosilane in SiC Growth

In this study, the application of CH
3
SiCl
3
(MTS) was investigated in the CVD epitaxial growth of SiC. The diverse growth conditions under different carrier gases, temperatures, and carrier gas flow rates were examined and verified. Based on these findings, a comprehensive set of growth conditions was developed. It was revealed that an optimal temperature of approximately 1500°C is suitable for the use of MTS, and in order to optimize epitaxial growth, a low-flow carrier gas environment should be employed. During various experiments, the deposition of Si elements proved to be a challenging issue. The utilization of higher temperatures and larger gas flow rates often led to the removal of Si elements from the growing epitaxial layer. Therefore, it is crucial to establish appropriate growth conditions in order to achieve efficient and reliable epitaxial growth of SiC using MTS as a precursor.