Study on the Influence of FS Region on the Conduction Characteristics of GaN based RC-IGBT

The effect of doping concentration and thickness of field stop (FS) region on the characteristics of GaN based Reverse Conduction Insulated Gate Bipolar Transistor (RC-IGBT) is studied. By comparing the forward and reverse conduction characteristics of the device when the doping concentration in the FS region is 5e16cm
⁻³
, 8e16cm
⁻³
, 1e17cm
⁻³
, 2e17cm
⁻³
, 3e17cm
⁻³
, 5e17 cm
⁻³
, it can be seen that the higher the doping concentration in the FS region, the larger the snapback point voltage of RC-IGBT, which means that the more difficult it is to convert between modes; However, the latch-up voltage increases, which means that the device is less prone to latch- up, and the reverse conduction ability is better. By comparing the forward and reverse conduction characteristics of the device when the thickness of the FS region is 0.2μm, 0.3μm, 0.4μm, 0.5μm, 0.6μm, 0.7μm, it can be seen that the thicker the FS region is, the snapback point voltage of the device increases slightly, but the latch-up voltage increases obviously, and the reverse conduction ability is almost unchanged.