Half-FinFET Based on Double-Channel AlGaN/GaN Heterostructure

A novel Half-FinFET based on double-channel AlGaN/GaN heterostructure was developed for applications requiring high linearity. The transfer characteristics of the device are simulated by TCAD simulation software. The enhancement in current density and linearity characteristics has been achieved by optimizing the gate configuration of the device. The half-fin-type gate of the device modulates the transconductance characteristics. Therefore, the linearity characteristics can be significantly improved by optimizing the half-fin configuration.