Fabrication and Characterization of 750V SiC MOSFET for New Energy Vehicles

For new energy vehicle applications, For 480V bus voltage, 750V SiC MOSFET device is the most suitable Power devices. In this paper, Simulation, Fabrication and Characterization of high current density 750V 11 mΩ SiC MOSFETs were reported, the breakdown voltage were 970V and the on-stae current were scaled up to 150A. Base on the simulation of drift epilayer, Doping of JFET region, the specific on-resistance reduced from 3.0mΩ-cm2 to 2.21mΩ- cm2.A 750V 800A full SiC Power Modules was fabricated, the power module shows fast switching characteristics with turn-on and turn-off times of 117 ns and 80 ns.