Electrical Performance Analysis of AlGaN/GaN Fin-HEMTs with Different Gate Structures by TCAD Simulation

In this paper, AlGaN/GaN fin-shaped high-electron mobility transistors (Fin-HEMTs) with different gate structures are simulated in 3-D TCAD. By comparing the transfer and transconductance curves and observing the two-dimensional electron gas (2-DEG) distribution underneath the gate, the effect of gate variations on the threshold voltage of AlGaN/GaN Fin-HEMTs is investigated in three dimensions: width, height, and length. The results show that Fin devices have better gate control compared to planar devices and that the threshold voltage of Fin devices is inversely proportional to the width of the gate and, conversely, proportional to the height and length of the gate, which provides a reference for miniaturized device design.