Effect of mixed PN on the electrical characteristics of 1200V/20A 4H-SiC MPS diodes

The effect of mixed PN on the forward current of 1200V 4H-SiC MPS diodes was revealed. The experimental results show that the mixed PN-MPS diodes can reduce the forward voltage. The possible reasons were analyzed based on simulation calculations and theoretical explanations. Compared with the JBS diodes, when the forward voltage is applied, the space charge region of the mixed PN-MPS diodes is reduced by 0.4 μm and the Schottky effective area is imperceptibly increased by 0.4 μm. The imperceptible increase of the Schottky area will decrease the on-resistance and increase the forward current. At the same time, the reverse characteristics are not affected. The test results of forward and reverse characteristics were consistent with the simulation results.