4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination

The FI structure can break the theoretical 1-D limit of the SiC power semiconductor. In this paper, the 4H-SiC Floating Island Junction Barrier Schottky (FIJBS) diodes with Multi- layer Floating Field Ring (MFFR) termination are fabricated, characterized, simulated, and analyzed. The specific ON- resistance of the FIJBS decreases as the island spacing increases, and increases as the temperature increases. The breakdown voltage decreases and the leakage current increases, as the island spacing increases. The MFFR termination is used to terminate the active region of the FIJBS. The breakdown voltage first increases and then saturates with increasing the terminal ring number. And it also first increases and then saturated with the increasing terminal first ring spacing. The optimized MFFR termination can distribute the electric field evenly across the device, so as to withstand a high reverse voltage. The FIJBS with MFFR termination is also proved to have a good tolerance to the alignment deviation.