Subthreshold Swing Model of GaN-Based Fin-Gate High Electron Mobility Transistors

Compared to the traditional HEMTs, better gate control ability especially smaller subthreshold swing, can be achieved with a fin-gate structure, which can be widely used in power, RF circuits. However, there has been few works related to subthreshold swing reported previously. In this study, a Fin- HEMT device is investigated by TCAD simulation, and a subthreshold swing model was constructed. The simulation results verify the performance of the model. According to the simulation results, with an error of less than 6%, this work provide design guidlines for the research of Fin-HEMT devices.