26-GHz GaAs Room-Temperature Dynamic Divider Circuit

This paper describes the operation of a buffered FET logic (BFL) dynamic divider fabricated with advanced processes such as 0.2-μm gate length MESFETs, active channels grown with molecular beam epitaxy (MBE), and airbridge interconnects. The divider operated up to 26.5 GHz at room temperature at a power dissipation of 310 mW. Electro-optic techniques were used to verify divider operation.