A 1.2 NS GaAs 4kb Read-Only-Memory Fabricated by 0.5 µm-Gate BP-Saint

A fully functional 4kb GaAs Read Only Memory has been demonstrated with an access time of 1.2 ns and a power dissipation of 3.75 W including ECL-compatibie I/O buffers. In the design, a new single-transistor-type memory cell and an E/D DCFL for peripheral circuits are adopted. In the fabrication, a 0.5 µm-gate BP-SAINT is used where typical E-FETs have a transconductance of 260 mS/mm.