GaAs HBT LSI/VLSI Fabrication Technology

Bipolar HIZL technology has been developed for fabrication of LSI/VLSI circuits with high yields. Using MOCVD epi deposition technique, defects levels of <25/cm
²
have been achieved with gains of 30 to 50 for the emitter-down transistor. In-circuit gates delay of 350 pS for fan-out-of-four has been demonstrated for 2 micron technology and 150 ps predicted for 1.5 micron technology. IK and 4K gate arrays have been fabricated with lot yields of 37% and 10%, respectively. Reliability testing shows ESD tolerance > 2000 volts, full temperature operation and high radiation hardness including SEU.