L-Band GaAs Transceiver Components

The development of three GaAs MMIC's for L-Band Radar Transceiver (T/R) applications has been accomplished. The three chips are a 5-bit phase-shifter, a 3-stage 1-watt power amplifier and a 3-stage low noise amplifier. The transmit/receive switching functions are included as part of the individual designs. These MMIC designs demonstrate the feasibility of using 2 um gates for both power amplifier and low noise amplifier functions at L-Band, which reduces the processing complexity and allows both amplifier designs to be processed on a single GaAs wafer. This allows for the possibility of integrating the power amplifier and low noise amplifier into a single chip as the processing yields improve. Performance and processing yield data for each of the individual MMIC's is presented.