GaAlAs/GaAs Integrated Optoelectronic Transmitter using Selective MOCVD Epitaxy and Planar ION Implantation

The development of a GaAlAs/GaAs integrated laser/MESFET transmitter which operates at frequencies in excess of 1 GHz is described. Such a device is the basis for realizing high-performance integrated optoelectronic transmitters, receivers, and transceivers with on-chip GaAs multiplexers, demultiplexers, and logic functions. A selective GaAlAs/GaAs optical device epitaxy technique, based on metalorganic chemical vapor deposition (MOCVD), and planar ion implanted GaAs devices were utilized to monolithically integrate double heterostructure lasers with implanted MESFET drivers. This integration scheme was formulated for potential compatibility with present GaAs IC designs such as buffered FET logic (BFL) and Schottky diode/FET logic (SDFL) circuits which require selective, multiple implants, and small gate geometries. Details of the monolithic integration technique, the characteristics of integrated laser and MESFET components, and the operational characteristics of the integrated transmitter are described.