Design of a Radiation-Tolerant Bandgap Voltage Reference for HEP applications

This work discusses the design of a bandgap voltage reference circuit to be operated in harsh radiation environments. The circuit, designed in a standard 28 nm CMOS technology with a core voltage supply of 0.9 V, exhibits in simulations an average output voltage of about 480 mV with an average temperature coefficient of 22 ppm/°C in the range [-40°C, 60°C]. Some preliminary results of the characterization are also presented.