Analysis of 6T Static Random Access Memory Using CMOS Technology with 22nm Standard

Random-access memory that uses latching circuitry is a crucial part of the cohesive cache memory of portable digital devices. In order to analyze a 6T SRAM using CMOS technology, it is necessary to look at the SRAM cell structure, operation, and performance metrics. The six transistors that make up an SRAM cell each have a specific function that they do. High speed, limited space occupancy, and efficient power consumption are all made possible by the CMOS technology utilized in the construction of the SRAM cell. Several criteria, including read and write access times, power consumption, and stability, are taken into consideration while analyzing the 6T SRAM cell’s performance. Process variation, temperature changes, and voltage fluctuations are other variables that have an impact on the cell’s performance. As a result, simulations of various operating situations are used in the analysis of the cell to gain a complete understanding of its behavior. The 6T SRAM was examined using CMOS technology, and the results show that the cell has a high level of stability, quick read and write computing times, and low power usage. However, process variance, changes in temperature, and voltage fluctuations can all have an impact on the cell’s performance. Overall, SRAM consisting of six transistors cell with CMOS structure is a productive memory cell that can be employed in a variety of settings, such as image processing, digital signal processing, and microprocessors. The construction and execution of a 6T SRAM cell using industry-standard Complementary Metal Oxide Semiconductor (CMOS) processes at 45nm and 22nm are described in this work. LTSpice XVII has been used to run the simulation.