Modeling of Magnetic Field in Low-Voltage Circuit Region of Medium-Voltage H-Bridge Module

The H-bridge module is the core component of the medium-voltage cascade system. The rapid switching of high-power Insulated gate bipolar transistor (IGBT) in the H-bridge module will cause rapid changes in the magnetic field in the module, which may cause strong electromagnetic interference to the low-voltage circuit of the module. Therefore, accurate prediction of the electromagnetic field radiation in the low-voltage region of H-bridge module is of much significant to evaluate the electromagnetic compatibility (EMC) performance in the H-bridge module. Due to the complex structure of H-bridge, the transient simulation of magnetic field in time domain often means high computational complexity. In view of this situation, this paper first proposes a simplified model for the prediction of magnetic field intensity in the H-bridge module, and verifies the accuracy and effectiveness of the simplified model by simulation, and then verifies the accuracy of the prediction of magnetic field intensity in the measurement of a Medium-voltage H-bridge module.