RF Perfomance Based Comprehensive Review on Homo and Hetero Structure of DG-JL-TFET

This exhaustive review focuses on the RF performance of Double-Gate Junctionless Tunnel Field-Effect Transistors (DG-JL-TFETs) in both homo and hetero-structures. These TFETs have garnered attention for their distinct tunneling mechanisms, promising energy-efficient and high-performance electronic devices. Through Sentarus Synopsis TCAD tool simulations, various homo and hetero material configurations were assessed to gauge their RF capabilities. The study extensively explores RF performance metrics like cutoff frequency, maximum oscillation frequency, and gain-bandwidth product, aimed at assessing their suitability for high-frequency applications. To enhance performance, both homo and hetero structures were investigated. Materials such as Germanium (Ge), Silicon Germanium (SiGe), InAs, and GaAs were strategically integrated on the source side, enhancing On-current and reducing tunnelling barrier width. The use of SiGe/Si and InAs/Ga
0.1
Sb
0.9
on drain and channel sides minimized leakage and improved electrical properties through high-K dielectrics. This approach elevates DC analysis and overall device performance, examining crucial parameters like on-state current I
on
, off-state current I
of f
, Band-To-Band Tunnelling (BTBT), and subthreshold slope (SS) in both structures. AC Simulation delves into essential metrics including highest oscillation frequency f max, current cut-off frequency f
t
at unity gain, transconductance gm, Gain Bandwidth Product (GBW), and Figure of Merit (FOM), offering comprehensive insights driven by accurate results. Notably, exploiting dielectric constant variations presents intriguing avenues for biomolecule detection and advancements in FET-based bio-sensors.