Sub-THz Transmitter Radio Integrated Circuits for Super high-speed 6G Mobile Communications

This paper presents system specifications from sub-THz RF system design, and based on these specifications, designed the RF transceiver architecture and frequency planning. Using the designed RF transceiver specifications, a 2-channel RF transmitter IC was designed using a 40nm CMOS process. The fabricated RFIC exhibits a frequency conversion gain of 7.83 dB, a 3-dB bandwidth of 12.4 GHz, and features gain variations of over 10 dB and a 360-degree phase variation capability. It shows a saturation power of 5.8 dBm based on 1-channel simulation.