Effect of Annealing on Nanocrystalline CdZn(S0.5Se0.5)2 Thin Films Deposited by Unsophisticated Method: Optostructural Studies

IIB-VIA nanocrystalline thin films are of great importance due to their wide employability in cost reduction of energy producing devices especially in solar cells. In this investigation, we had grown hexagonal Nanocrystalline thin films of
$\text{CdZn}(\mathrm{S}_{0.5}\text{Se}_{0.5})_{2}$
on commercial glass substrate by unsophisticated technique: Arrested Precipitation Technique (APT). Further as grown films were annealed at 373 K and studied the consequences on physical properties of thin films. The deposited films have been subjected for morphological, Compositional, and optostructural characterizations using appropriate techniques. SEM micrographs indicates the presence of small spherical grains, which uniformly distributed on to the substrate with average grain size
$\sim 90$
nm for as deposited thin films. On annealing considerable enhancement in grain size occurred to form compact and dense thin films. EDS study confirms the presence of component elements of
$\text{CdZn}(\mathrm{S}_{0.5}\text{Se}_{0.5})_{2}$
thin films with good stoichiometric ratio. The optical absorption in visible region revealed direct allowed type of transitions for as deposited and annealed thin films with band gap energy 2.12 eV and 1.9 eV respectively. The XRD patterns of both as deposited and annealed films indicates polycrystalline nature of films and shows hexagonal crystal structure.